Samsung 990 EVO PLUS
PCIe M.2 · PCIe 4.0 x4 / 5.0 x2, NVMe 2.0 · Piccolo (4-channel)
Specifications
| Interface | PCIe 4.0 x4 / 5.0 x2, NVMe 2.0 |
|---|---|
| Controller | Piccolo (4-channel) |
| NAND Type | V-NAND V8 (236L TLC) |
| DRAM Cache | N/A (HMB) |
| Warranty | 5 years |
| Active Power | 5.5 W |
| Idle Power | 0.005 W |
| Seq Read | 7,150 MB/s |
|---|---|
| Seq Write | 6,300 MB/s |
| Rand Read | 850,000 IOPS |
| Rand Write | 1,350,000 IOPS |
| Endurance | 600 TBW |
| Seq Read | 7,250 MB/s |
|---|---|
| Seq Write | 6,300 MB/s |
| Rand Read | 1,000,000 IOPS |
| Rand Write | 1,350,000 IOPS |
| Endurance | 1200 TBW |
| Seq Read | 7,250 MB/s |
|---|---|
| Seq Write | 6,300 MB/s |
| Rand Read | 1,050,000 IOPS |
| Rand Write | 1,400,000 IOPS |
| Endurance | — |
Overview
Released as an enhanced version of the 990 EVO, the Samsung 990 EVO PLUS targets mainstream consumers seeking a balance of high performance storage at a comparatively low cost. The drive utilizes Samsung's 8th-gen V-NAND technology and is positioned as a cost-effective solution for gaming, content creation, and general computing applications.
Controller
The Samsung 990 EVO PLUS uses Samsung's proprietary Piccolo controller (S4LY022), a 4-channel design (2,400 MT/s) that provides enhanced power efficiency and thermal management compared to previous generations.
This controller features a 32-bit, hexacore ARM Cortex-R8 chip manufactured with a 5 nm Samsung FinFET process. There is no onboard DRAM. Instead, the uses system RAM via HMB (Host Memory Buffer) technology.
NAND Flash Memory
The drive utilizes Samsung's 8th generation V-NAND 3D TLC (Triple Level Cell) technology with 236-layer stacking. Compared to the 990 EVO (non-PLUS), which uses 133-layer NAND, the 990 EVO PLUS' NAND architecture delivers improved density, performance, and reliability while reducing power consumption. The V-NAND design also enables higher storage capacities in the compact M.2 2280 form factor while maintaining competitive pricing.
Power Consumption and Efficiency
The drive is optimized for low power consumption with the following specifications (2 TB variant):
- Active: 4.6W (maximum)
- Idle: 60mW (typical)
- Sleep (L1.2): 5mW
Advanced power management features include L1.2 low-power state support and Modern Standby compatibility for extended battery life in laptops.
Endurance and Over-Provisioning
Write endurance varies by capacity, with Total Bytes Written (TBW) ratings in line with other mainstream and high-end consumer SSDs:
- 1TB model: 600 TBW
- 2TB model: 1,200 TBW
- 4TB model: 2,400 TBW
The drive includes approximately 10% over-provisioning – space reserved for wear leveling and bad block management.
Performance Characteristics
Compared to its predecessor, the Samsung 990 EVO PLUS offers substantially higher sequential read and write speeds: up to 7,250 MB/s (read) and 6,300 MB/s (write). Random I/O performance is also higher versus the EVO non-PLUS, resulting in better overall performance for normal consumer workloads.
Specifications & Datasheet
Reviews
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“Ultimately, the Samsung 990 EVO Plus offers solid speed and reliability, making it a strong option for diverse users.”
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“... this is a drive you should be able to reliably buy and throw into any machine without too much worry.”